There are 3 Phd positions available:
1. One of the Phd-positions is focussed on a revolutionary design and realization of large array of “gated transistor” devices using much simpler lithographic methods compared to the state-of-the-art Si technology.
2. The second Phd position is related to investigate the existence of ferromagnetism on H-covered graphene: a fundamental experimental study making use of spin-polarized Scanning Tunneling Spectroscopy(STS) and photoemission spectroscopy.
3. The third Phd position is related to developing a highly sensitive gas sensor from grapheme, based on the extraordinary properties of graphene, e.g. the planar structure, the high conductivity, the low noise characteristic in graphene and the excellent low ohmic contacting option. The goal is to study and improve the sensitivity and the selectivity of clean (exfoliated and epitaxial graphene) and functionalized graphene for gas sensing and quantify the role of structural defects on the sensitivity. This will be studied in combination Raman spectroscopy with single molecule sensitivity in combination with Scanning Tunneling microscopy/spectroscopy (STM/STS).
In the group M2N we are presently investigating graphene, in particular the role of structural defects on the mobility and the interaction of electrons with phonons and plasmons. Besides graphene, there is strong activity in understanding the inelastic electron tunnelling mechanism for adsorbed molecules on surfaces, experimentally as well as theoretically. A large part of the group is involved in the design and improvement of the functionality of organic solar-cells and organic electronics.
The project involves a detailed investigation of the electronic structure of graphene grown on SiC substrates. In particular, the graphene/SiC interface