A funded PhD position is currently available to prepare and test high frequency transistors using GaN based materials. The position is co-sponsored by the European Space Agency (ESA) and the Irish Research Council for Science, Engineering and Technology (IRCSET) and would start in October 2010.
High frequency transistor circuits are required in many applications, particularly in microwave radios and in satellite communication systems. Group III-Nitride (III-N) materials have been shown to much potential in this area. Using strain and bandgap engineering, AlGaN-GaN based transistors have been made with excellent performance at gigahertz frequencies. These devices in their simplest form are a thin strained layer of AlGaN on an insulating GaN layer. An electric field is induced at the interface due to the crystal structure creating an electron channel which can be controlled by a gate electrode. The devices are called Heterojunction Field Effect Transistors (HFETs).
We would like to make the channel more conducting but this is not possible in AlGaN as the strain eventually leads to defects being formed which in turn gives poor devices. A new alternative is to change the AlGaN by InAlN, which can get round this problem. However its growth and device fabrication is difficult. In this PhD we will examine ways to get the benefits of the use of InAlN while address the problems that makes its use so challenging.
The student will be involved in the growth of the GaN layer structures using a brand new epitaxy tool at Tyndall, and in the fabrication of the devices using the cleanroom facilities. Devices will be tested for their performance both using the laboratories at Tyndall, and in collaboration with senior engineers at the ESA. The student will have the opportunity to spend extended periods in the Netherlands on the European Space Research and Technology Centre (ESTEC) Campus as part of the programme.
The funding requirements of this post limit applicants to citizens from European Union or ESA member states.
For further information, please contact Peter Parbrook at peter.parbrook@tyndall.ie
To apply, please submit a CV to careers@tyndall.iequoting the reference number.
At this time, Tyndall National Institute does not require the assistance of recruitment agencies.
Tyndall National Institute is an Equal Opportunities Employer.
High frequency transistor circuits are required in many applications, particularly in microwave radios and in satellite communication systems. Group III-Nitride (III-N) materials have been shown to much potential in this area. Using strain and bandgap engineering, AlGaN-GaN based transistors have been made with excellent performance at gigahertz frequencies. These devices in their simplest form are a thin strained layer of AlGaN on an insulating GaN layer. An electric field is induced at the interface due to the crystal structure creating an electron channel which can be controlled by a gate electrode. The devices are called Heterojunction Field Effect Transistors (HFETs).
We would like to make the channel more conducting but this is not possible in AlGaN as the strain eventually leads to defects being formed which in turn gives poor devices. A new alternative is to change the AlGaN by InAlN, which can get round this problem. However its growth and device fabrication is difficult. In this PhD we will examine ways to get the benefits of the use of InAlN while address the problems that makes its use so challenging.
The student will be involved in the growth of the GaN layer structures using a brand new epitaxy tool at Tyndall, and in the fabrication of the devices using the cleanroom facilities. Devices will be tested for their performance both using the laboratories at Tyndall, and in collaboration with senior engineers at the ESA. The student will have the opportunity to spend extended periods in the Netherlands on the European Space Research and Technology Centre (ESTEC) Campus as part of the programme.
The funding requirements of this post limit applicants to citizens from European Union or ESA member states.
For further information, please contact Peter Parbrook at peter.parbrook@tyndall.ie
To apply, please submit a CV to careers@tyndall.iequoting the reference number.
At this time, Tyndall National Institute does not require the assistance of recruitment agencies.
Tyndall National Institute is an Equal Opportunities Employer.
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